A Simulation Study of Various ETL Layers to Design the High Performance Pb-Free perovskite (FASnI3) Solar Cell

Authors

  • Khushboo Dixit Department of Electrical Engineering Dayalbagh Educational Institute (Deemed University) Agra
  • GUFRAN AHMAD DAYALBAGH EDUCATIONAL INSTITUTE (DEEMEDUNIVERSITY) AGRA

DOI:

https://doi.org/10.56042/ijpap.v62i11.8697

Keywords:

Perovskite solar cells, band gap, Cadmium Telluride, tungsten, Electron affinity, power conversion efficiency

Abstract

There are significant efforts being made to develop high-efficiency, lead-free perovskite solar cells (PSCs). In this study, Formamidinium tin iodide (FASnI3) has been used as an absorber layer to design a stable lead-free PSC. FASnI3 absorber has a wider band gap (1.41 eV) and is more temperature stable than lead-free Sn-based perovskite (CH3NH3SnI3). In this work, 1-D device simulation has been performed using SCAPS to get the optimum performance of the lead-free FASnI3-based PSCs. We have checked varieties of electron transport layers (ETL) such as WO3, TiO2, ZnO, PCBM, IGZO, ZnS, and WS2 to find the maximum power conversion efficiency (PCE) from the FASnI3 lead-free PSC. A detailed simulation study of the proposed solar cell architecture using SCAPS has been done to optimize the device structure and get the maximum power conversion efficiency. The proposed solar cell structure has shown an efficiency of 16% with a JSC of 27.02 mA, Voc of 0.925V, and FF of 63.98% which is the highest among the FASnI3 based lead-free solar cell structures to date.

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Published

2024-11-01