Reliability Investigation of Interfacial Defects in InGaAs-SOI-FinFET for High-Performance Applications

Abstract

This work investigates the reliability of interfacial defects in Indium Gallium Arsenide (InGaAs) SOI-FinFETs for high-performance applications. In_0.53Ga_0.47As is a promising material for next-generation transistors due to its high electron mobility, which is essential for high-speed and high-frequency applications. However, the presence of interface trap charges (ITCs) can significantly impact device performance and reliability. We comprehensively analysed ITCs in InGaAs
SOI-FinFETs, examining their effects on the linearity performance parameters such as VIP2, VIP3, IIP3, IMD3, HD2 and HD3. All the results indicate that optimizing the interface quality is crucial for enhancing the reliability and performance of InGaAs SOI-FinFETs. This work provides valuable insights into the defect mechanisms and offers guidelines for improving the fabrication processes to achieve more reliable high-performance InGaAs-SOI-FinFETs. Therefore, InGaAs-based FinFET is the most suitable high-performance semiconductor device for next-generation use. InGaAs, with its superior electron mobility and high saturation velocity, offer substantial benefits for high-frequency and high-speed applications, which make it a desirable substitute for silicon.